To provide an organic metal vapor deposition method, in which good quality crystal having few hillocks is obtained by sharply reducing the effects of residual gas at growing of a semiconductor crystal.
An organic metal vapor deposition equipment is provided with a reaction tube 2 for decomposing and synthesizing a material gas by supplying a material gas containing constituent elements of thin films to be formed on a substrate 8, a susceptor 3 which is arranged in the reaction tube 2 and used for mounting the substrate 8, and a heater 6 which surrounds the periphery of the reaction tube 2 and heats the susceptor 3. After the substrate 8 has been mounted on the susceptor 3, the material gas containing the constituent elements of the thin films is introduced in the reaction tube 2. The susceptor 3 is heated by the heater 6, and vapor deposition is performed by thermally decomposing and synthesizing the material gas. Prior to the mounting of the substrate 8 on the susceptor 3, the susceptor 3 is baked by the use of the heater 6 at a baking temperature which is higher than the growing temperature of the films.
KUROMIZU YUUICHI
OKAMURA AYAKA
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