Title:
有機トランジスタ及びその作製方法並びに有機トランジスタシート
Document Type and Number:
Japanese Patent JP4857669
Kind Code:
B2
Abstract:
To provide a method for manufacturing an organic transistor in which an organic semiconductor layer can easily and precisely be formed at a specified region without using a laser nor performing accurate alignment.
The manufacturing method includes a stage of bringing into contact and heating a transferred body 11 which has a projection C1 on a substrate 1 and a transfer body 50 where at least the organic semiconductor layer 4 is formed, and transferring the organic semiconductor layer 4 only onto the projection C1 formed of one of an insulating layer, a gate insulating film 3, a source electrode 4, and a drain electrode 6.
COPYRIGHT: (C)2007,JPO&INPIT
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Inventors:
Hiroshi Kishimoto
Application Number:
JP2005254585A
Publication Date:
January 18, 2012
Filing Date:
September 02, 2005
Export Citation:
Assignee:
Dai Nippon Printing Co.,Ltd.
International Classes:
H01L21/336; H01L29/786; H01L51/05; H01L51/40
Domestic Patent References:
| JP2005079560A | ||||
| JP2006528430A | ||||
| JP2007067390A | ||||
| JP2006173444A | ||||
| JP2004304115A | ||||
| JP11243209A |
Foreign References:
| WO2005011016A1 |
Attorney, Agent or Firm:
Shunichi Yoshimura