Title:
ORGANIC TRANSISTOR
Document Type and Number:
Japanese Patent JP2008198791
Kind Code:
A
Abstract:
To provide an organic transistor having a low operating voltage and a stable operation with a small variation in characteristic and a small shift in threshold voltage.
The organic transistor comprises a semiconductor layer comprising an organic material, a source electrode and a drain electrode connected to the semiconductor layer, and a gate electrode contacting with the semiconductor layer through the gate insulating film. The gate insulating film has a high permittivity film formed at the gate electrode side and having a high permittivity film having a relative permittivity of not less than 10, and an inorganic insulating film contacting with the semiconductor layer and structured by an inorganic material.
Inventors:
FUJISAKI YOSHIHIDE
KURITA YASUICHIRO
NAKAJIMA YOSHIKI
KURITA YASUICHIRO
NAKAJIMA YOSHIKI
Application Number:
JP2007032387A
Publication Date:
August 28, 2008
Filing Date:
February 13, 2007
Export Citation:
Assignee:
JAPAN BROADCASTING CORP
International Classes:
H01L29/786; H01L21/336; H01L51/05; H01L51/30
Domestic Patent References:
| JP2003255857A | 2003-09-10 | |||
| JP2004128124A | 2004-04-22 |
Attorney, Agent or Firm:
Tadahiko Ito