OVERCURRENT PROTECTING CIRCUIT OF IGBT - 株式会社日立製作所

Title:

OVERCURRENT PROTECTING CIRCUIT OF IGBT

Document Type and Number:

Japanese Patent JP3680722

Kind Code:

B2

Abstract:

PROBLEM TO BE SOLVED: To prevent breakdown due to overcurrent or overvoltage, and enable safe transition to the off-state, when an overcurrent flows in an IGBT.
SOLUTION: When a state of overcurent is generated, a gate voltage of the IGBT is decreased quickly as far as a set value by a gate current increasing means, and switching operation is started quickly. After that, the gate voltage holds the set value, and gentle switching is realized.

Inventors:

Yutaka Sato
Kimura Arata
Masahiro Nagasu

Application Number:

JP2000285226A

Publication Date:

August 10, 2005

Filing Date:

September 14, 2000

Export Citation:

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