Title:
過熱保護回路及び電源用集積回路
Document Type and Number:
Japanese Patent JP5491223
Kind Code:
B2
Abstract:
Provided is a power supply integrated circuit including an overheat protection circuit with high detection accuracy. The overheat protection circuit includes: a current generation circuit including: a first metal oxide semiconductor (MOS) transistor including a gate terminal and a drain terminal that are connected to each other, the first MOS transistor operating in a weak inversion region; a second MOS transistor including a gate terminal connected to the gate terminal of the first MOS transistor, the second MOS transistor having the same conductivity type as the first MOS transistor and operating in a weak inversion region; and a first resistive element connected to a source terminal of the second MOS transistor; and a comparator for comparing a reference voltage having positive temperature characteristics and a temperature voltage having negative temperature characteristics, which are obtained based on a current generated by the current generation circuit.
Inventors:
Takashi Imura
Takao Nakashita
Shoichi Sugiura
Atsushi Igarashi
Masahiro Mitani
Takao Nakashita
Shoichi Sugiura
Atsushi Igarashi
Masahiro Mitani
Application Number:
JP2010023387A
Publication Date:
May 14, 2014
Filing Date:
February 04, 2010
Export Citation:
Assignee:
Seiko Instruments Inc.
International Classes:
G05F1/56; H02H5/04; H02H7/20; H02M1/00
Domestic Patent References:
| JP2005100295A | ||||
| JP5303434A | ||||
| JP2001092544A | ||||
| JP2007312529A | ||||
| JP2005122753A | ||||
| JP62229416A |
Attorney, Agent or Firm:
Kentaro Kuhara
Noriaki Uchino
Nobuyuki Kimura
Noriaki Uchino
Nobuyuki Kimura
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