Title:
酸化物膜の成膜方法、半導体装置の製造方法、及び、酸化物膜の成膜装置
Document Type and Number:
Japanese Patent JP7216371
Kind Code:
B2
Abstract:
A method of forming an oxide film is provided. The method may include: supplying mist of a solution including a material of the oxide film dissolved therein to a surface of a substrate while heating the substrate at a first temperature so as to epitaxially grow the oxide film on the surface; and bringing the oxide film into contact with a fluid comprising oxygen atoms while heating the oxide film at a second temperature higher than the first temperature after the epitaxial growth of the oxide film.
Inventors:
Tatsushi Nagaoka
Hiroyuki Nishinaka
Yoshimoto Masahiro
Hiroyuki Nishinaka
Yoshimoto Masahiro
Application Number:
JP2019105350A
Publication Date:
February 01, 2023
Filing Date:
June 05, 2019
Export Citation:
Assignee:
株式会社デンソー
International Classes:
H01L21/365; C23C16/40; C30B25/02; C30B29/16; C30B33/02; H01L21/368
Domestic Patent References:
| JP2014067845A | ||||
| JP2001503567A | ||||
| JP2014063597A | ||||
| JP2015070248A | ||||
| JP2008289967A |
Foreign References:
| US20050014032 |
Attorney, Agent or Firm:
Patent Attorney Corporation Kaiyu International Patent Office
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