Title:
酸化物化学機械平坦化（ＣＭＰ）研磨組成物
Document Type and Number:
Japanese Patent JP7469006
Kind Code:
B2
Abstract:
Polishing compositions comprising ceria coated silica particles and organic acids having one selected from the group consisting of sulfonic acid group, phosphonic acid group, pyridine compound, and combinations thereof, with pH between 5 and 10 and electrical conductivity between 0.2 and 10 millisiemens per centimeter provide very high silicon oxide removal rates for advanced semiconductor device manufacturing.
Inventors:
Shea Pocy
Krishna Pee Murella
Joseph Dee Rose
Hong Chun Chou
Mark Lenard O'Neill
Krishna Pee Murella
Joseph Dee Rose
Hong Chun Chou
Mark Lenard O'Neill
Application Number:
JP2019147656A
Publication Date:
April 16, 2024
Filing Date:
August 09, 2019
Export Citation:
Assignee:
Vertham Materials US, Limited Liability Company
International Classes:
C09K3/14; B24B37/00; H01L21/304
Domestic Patent References:
| JP2018059054A | ||||
| JP2013541609A | ||||
| JP2013540850A |
Foreign References:
| WO1999043761A1 |
Other References:
Rebecca DYLLA-SPEARS et al.,“Charged micelle halo mechanism for agglomeration reduction in metal oxide particle based polishing slurries”,Colloids and Surfaces A: Physicochemical and Engineering Aspects,2014年04月,Vol. 447,p.32-43,DOI: 10.1016/j.colsurfa.2014.01.061
Attorney, Agent or Firm:
Atsushi Aoki
Shinji Mihashi
Junichi Tsuruta
Tomohiro Minamiyama
Youichi Watanabe
Kazuhiro Nakamura
Kenji Kimura
Shinji Mihashi
Junichi Tsuruta
Tomohiro Minamiyama
Youichi Watanabe
Kazuhiro Nakamura
Kenji Kimura