Title:
酸化物半導体装置及びその製造方法
Document Type and Number:
Japanese Patent JP6980116
Kind Code:
B2
Abstract:
An object is to provide a technology for enabling prevention of deterioration of characteristics of an oxide semiconductor device. The oxide semiconductor device includes an n-type gallium oxide epitaxial layer, a p-type oxide semiconductor layer, and an oxide layer. The p-type oxide semiconductor layer is disposed above the n-type gallium oxide epitaxial layer, contains an element different from gallium as a main component, and has p-type conductivity. The oxide layer is disposed between the n-type gallium oxide epitaxial layer and the p-type oxide semiconductor layer, and is made of a material different from gallium oxide and different at least partly from a material of the p-type oxide semiconductor layer.
Inventors:
Yuhei Yuda
Tatsuro Watabiki
Shinsuke Miyajima
Yuki Takiguchi
Tatsuro Watabiki
Shinsuke Miyajima
Yuki Takiguchi
Application Number:
JP2020538314A
Publication Date:
December 15, 2021
Filing Date:
August 08, 2019
Export Citation:
Assignee:
Mitsubishi Electric Corporation
National University Corporation Tokyo Institute of Technology
National University Corporation Tokyo Institute of Technology
International Classes:
H01L29/872; H01L21/329; H01L21/336; H01L29/06; H01L29/12; H01L29/24; H01L29/78; H01L29/861; H01L29/868
Domestic Patent References:
| JP2016031953A | ||||
| JP2017199869A |
Foreign References:
| WO2018020849A1 | ||||
| WO2017111173A1 |
Attorney, Agent or Firm:
Yoshitake Hidetoshi
Takahiro Arita
Takahiro Arita