Title:
Oxide semiconductor film
Document Type and Number:
Japanese Patent JP6114168
Kind Code:
B2
Abstract:
A semiconductor device includes a gate electrode, a gate insulating film which includes oxidized material containing silicon and covers the gate electrode, an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the gate insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region. At least the first region includes a crystal portion.
Inventors:
Tatsuya Honda
Masashi Tsubuki
Yusuke Nonaka
Takashi Shimazu
Shunpei Yamazaki
Masashi Tsubuki
Yusuke Nonaka
Takashi Shimazu
Shunpei Yamazaki
Application Number:
JP2013249851A
Publication Date:
April 12, 2017
Filing Date:
December 03, 2013
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; G02F1/1368; H01L21/336
Domestic Patent References:
| JP2012124446A | ||||
| JP2011122238A | ||||
| JP2010186994A | ||||
| JP2001077443A | ||||
| JP2004266263A |
Foreign References:
| WO2009075281A1 | ||||
| WO2008117739A1 |