Title:
Oxide semiconductor film
Document Type and Number:
Japanese Patent JP6356203
Kind Code:
B2
Abstract:
To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film contains indium (In), gallium (Ga), and zinc (Zn) and includes a c-axis-aligned crystalline region aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. Further, the composition of the c-axis-aligned crystalline region is represented by In1+δGa1−δO3(ZnO)m (0<δ<1 and m=1 to 3 are satisfied), and the composition of the entire oxide semiconductor film including the c-axis-aligned crystalline region is represented by InxGayO3(ZnO)m (0
Inventors:
Masahiro Takahashi
Kengo Akimoto
Shunpei Yamazaki
Kengo Akimoto
Shunpei Yamazaki
Application Number:
JP2016227674A
Publication Date:
July 11, 2018
Filing Date:
November 24, 2016
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786
Domestic Patent References:
| JP2010153802A | ||||
| JP2010040552A |
Foreign References:
| US20110062436 |