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Title:
OXIDE FOR SEMICONDUCTOR LAYER OF THIN FILM TRANSISTOR, THIN FILM TRANSISTOR, AND DISPLAY APPARATUS
Document Type and Number:
Japanese Patent JP2014175503
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide an oxide for a semiconductor layer of a thin film transistor having high mobility and reduced defect density.SOLUTION: The oxide for a semiconductor layer of a thin film transistor contains an oxide composed of metal elements of In, Zn, and Sn, wherein defect density of the oxide is 7.5×10cmor less, and mobility is 15 cm/Vs or more.

Inventors:
KOSAKA SHUJI
HAYASHI KAZUSHI
Application Number:
JP2013047347A
Publication Date:
September 22, 2014
Filing Date:
March 08, 2013
Export Citation:
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Assignee:
KOBE STEEL LTD
International Classes:
H01L29/786; C23C14/08; H01L21/203; H01L21/336
Domestic Patent References:
JP2012104809A2012-05-31
JP2011171516A2011-09-01
JP2013048217A2013-03-07
JP2012216729A2012-11-08
Foreign References:
WO2010023889A12010-03-04
Attorney, Agent or Firm:
Hisakazu Ueki
Hisahiko Ueki
Tadashi Sugawa
Hiroaki Ito
Akemi Takeoka



 
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