Title:
OXIDE SEMICONDUCTOR SPUTTERING TARGET AND METHOD OF FABRICATING THIN FILM TRANSISTOR USING THE SAME
Document Type and Number:
Japanese Patent JP2023003394
Kind Code:
A
Abstract:
To provide a sputtering target used in a sputtering process for depositing a thin film, specifically an active layer of a thin film transistor.SOLUTION: There is provided a sputtering target used in a sputtering process for depositing an active layer of a thin film transistor, the sputtering target being an oxide semiconductor sputtering target that contains a material based on a composition of In, Sn, Ga, Zn, and O. Further, the oxide semiconductor sputtering target contains indium oxide, tin oxide, gallium oxide and zinc oxide. The In, Sn, Ga, and Zn contents are in ranges of 60-80%, 0.5-8%, 5-15%, and 10-30% by weight with respect to the weight of (In+Sn+Ga+Zn), respectively. There is also provided a method of fabricating a thin film transistor, the method including depositing an active layer using the oxide semiconductor target.SELECTED DRAWING: Figure 1
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Inventors:
KANG SHINHYUK
MOON JEONGHYUN
OK KANGMIN
MOON JEONGHYUN
OK KANGMIN
Application Number:
JP2022094923A
Publication Date:
January 11, 2023
Filing Date:
June 13, 2022
Export Citation:
Assignee:
KV MAT CO LTD
International Classes:
H01L21/203; C23C14/08; C23C14/34; H01L29/786
Attorney, Agent or Firm:
Hidekazu Miyoshi
Masakazu Ito
Yuko Hara
Kazushi Obuchi
Masakazu Ito
Yuko Hara
Kazushi Obuchi