Title:
OXIDE SINTERED BODY, OXIDE SINTERED BODY SPUTTERING TARGET AND ITS MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2014125422
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a high quality and high yield IGZO sputtering target suitable for an oxide semiconductor film use by improving variation of property of an IGZO thin film and improving generation of cracks during target manufacturing and sputtering which are problems especially for large scale sputtering target for oxide semiconductor film.SOLUTION: There is provided an oxide sintered body containing at least In, Ga and Zn, having a homologous crystal structure represented by InGaZnOand a diffraction intensity ratio I1/I2 of 0.85 to 1.25, where I1 is a diffraction intensity at 30.3° to 30.9° of an incident angle in X-ray diffraction (2θ) and I2 is diffraction intensity at 31.1° to 31.5°.
Inventors:
ONOMI KENJI
HARA SHINICHI
KOGO MASANORI
ITO KENICHI
SHIBUTAMI TETSUO
HARA SHINICHI
KOGO MASANORI
ITO KENICHI
SHIBUTAMI TETSUO
Application Number:
JP2012286142A
Publication Date:
July 07, 2014
Filing Date:
December 27, 2012
Export Citation:
Assignee:
TOSOH CORP
International Classes:
C04B35/00; C23C14/34; H01L21/363
Domestic Patent References:
| JP2011105563A | 2011-06-02 | |||
| JP2012132065A | 2012-07-12 |
Foreign References:
| WO2011040028A1 | 2011-04-07 |