Oxide sintered body, target for sputtering, and oxide semiconductor thin film obtained by using it.

Title:

Oxide sintered body, target for sputtering, and oxide semiconductor thin film obtained by using it.

Document Type and Number:

Japanese Patent JP6354841

Kind Code:

B2

Abstract:

Provided are: a sintered oxide which is capable of obtaining low carrier density and high carrier mobility when configured as an oxide semiconductor thin film by using a sputtering method; and a sputtering target which uses the same. The sintered oxide contains indium, gallium and copper as oxides. It is preferable for the gallium content to be at least 0.08 and less than 0.20 when expressed as an atomic ratio (Ga/(In+Ga)), the copper content to be at least 0.001 and less than 0.03 when expressed as an atomic ratio (Cu/(In+Ga+Cu)), and for the sintering to be performed at 1,200-1,550° C., inclusive. A crystalline oxide semiconductor thin film obtained by forming this sintered oxide as a sputtering target makes it possible to achieve a carrier density of 1.0×1018 cm−3 or lower, and a carrier mobility of 10 cm2 V−1 sec−1 or higher.

Inventors:

Tokugyo Nakayama
Eiichiro Nishimura
Fumihiko Matsumura
Masashi Iwara

Application Number:

JP2016513813A

Publication Date:

July 11, 2018

Filing Date:

April 15, 2015

Export Citation:

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