Title:
酸化物薄膜素子およびその製造方法
Document Type and Number:
Japanese Patent JP4258106
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a oxide thin film element in which a functional oxide thin film consisting of a high quality oxide epitaxial layer is grown on a substrate of a Si single crystal and its production method. SOLUTION: A oxide thin film is epitaxially grown on such a metal sulfide placed directly on the surface of a Si substrate as a buffering layer as In2S3, AlInS3, CeInS3, LaInS3, CaIn2S4, MgIn2S4, MnIn2S4, BaIn2S4, MgS, CaS, and MnS. The Si substrate can be used as a bottom electrode, when the electric conductivity is improved by doping the metal sulfide with tin. When a metal sulfide epitaxial thin film is formed directly on the Si substrate surface, preferably the sulfide be sulfur-terminated and a metal thin film of the platinum family be inserted on the buffer layer.
Inventors:
Yoshinori Konishi
Application Number:
JP2000194688A
Publication Date:
April 30, 2009
Filing Date:
June 28, 2000
Export Citation:
Assignee:
Fuji Electric Device Technology Co., Ltd.
International Classes:
C30B29/16; H01L21/8246; H01L21/822; H01L27/04; H01L27/105; H01L39/02; H01L39/22
Domestic Patent References:
| JP3160735A | ||||
| JP61111137A | ||||
| JP200022205A | ||||
| JP200012233A | ||||
| JP451495A | ||||
| JP4199752A | ||||
| JP8148765A | ||||
| JP468579A | ||||
| JP5121781A | ||||
| JP9142998A | ||||
| JP832047A | ||||
| JP8264900A | ||||
| JP888679A |
Attorney, Agent or Firm:
Yoichi Matsumoto
Hiroshi Yamamoto
Hiroshi Yamamoto
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