Title:
OXIDE THIN FILM, SUBSTRATE FOR ELECTRONIC DEVICE AND METHOD FOR FORMING OXIDE THIN FILM
Document Type and Number:
Japanese Patent JP3223233
Kind Code:
B
Abstract:
PURPOSE: To form a high-quality functional thin film well epitaxially grown on an oxide film as a buffer film by forming the epitaxial film containing an oxide, consisting essentially of Zr and having specific physical properties on an Si single crystal substrate.
CONSTITUTION: This oxide thin film is formed on an Si single crystal substrate and has a composition of Zr1-xRxO2-δ, (R is a rare earth metal including Y; (x) is 0-0.75; δ is 0-0.5]. The half-width of a locking curve of the reflection from (002) face or (111) face thereof is ≤1.5 and at least 80% surface has ≤0.60nm Rz average roughness obtained from ten points at 500nm reference length. The single crystal substrate having the oxide thin film is useful as a substrate for electronic devices.
Inventors:
Yano, Yoshihiko
Noguchi, Takao
Noguchi, Takao
Application Number:
JP1995000093024
Publication Date:
August 17, 2001
Filing Date:
March 27, 1995
Export Citation:
Assignee:
TDK CORP
International Classes:
C30B23/02; C30B29/22; H01L21/20; H01L21/314; C30B23/02; C30B29/10; H01L21/02; (IPC1-7): C30B29/22; C30B23/02; H01L21/20; H01L21/314