Title:
酸化物蒸着材
Document Type and Number:
Japanese Patent JP5505642
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide an oxide vapor deposition material enabling stable manufacturing of a transparent conductive film having low resistance and high optical transparency even if a low oxygen amount is introduced during film deposition, the transparent conductive film manufactured by using the oxide vapor deposition material, and a solar cell using the transparent conductive film for an electrode.SOLUTION: The oxide vapor deposition material is characteristically configured by a sintered body containing gadolinium with a Gd/In atomic ratio of 0.001 to 0.070 and indium oxide as a chief ingredient, and has an L* value of 60 to 94 in CIE1976 color system. The oxide vapor deposition material having the L* value of 60 to 94 has an optimum oxygen amount, so that a transparent conductive film having low resistance and high transparency in a visible range to a near infrared range can be manufactured by a vacuum evaporation method even if an oxygen gas introduction amount into a film forming vacuum chamber is small, a composition difference between a film and a vapor deposition material can be reduced as the introduction amount of oxygen gas is small, and the variation of a film composition and variation of characteristics during mass production can be reduced.
Inventors:
Muwa Kuwahara Masakazu
Application Number:
JP2010170731A
Publication Date:
May 28, 2014
Filing Date:
July 29, 2010
Export Citation:
Assignee:
Sumitomo Metal Mining Co., Ltd.
International Classes:
C23C14/24; C04B35/00; H01B1/08; H01B5/14; H01L31/04; H01L31/06
Domestic Patent References:
| JP2004207221A | ||||
| JP2225366A | ||||
| JP6048815A |
Foreign References:
| WO2008114588A1 |
Other References:
R. K. Gupta et al. ,High mobility, transparent, conducting Gd-doped In2O3 thin films by pulsed laser deposition,Thin Solid Films,NL,Elsevier B. V. ,2007年 9月15日,Vol. 516,pp. 3204-3209
X. Niu et al. ,Sensing properties of rare earth oxide doped In2O3 by a sol-gel method,Sens. Actuators B Chem. ,NL,Elsevier B. V. ,2005年11月15日,Vol. 115,pp. 434-438
X. Niu et al. ,Sensing properties of rare earth oxide doped In2O3 by a sol-gel method,Sens. Actuators B Chem. ,NL,Elsevier B. V. ,2005年11月15日,Vol. 115,pp. 434-438
Attorney, Agent or Firm:
Akira Ueda