Title:
P-N JUNCTION DIODE AND ITS MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP3288430
Kind Code:
B2
Abstract:
PURPOSE: To prevent a deterioration with age in diode characteristics, by placing a p-n junction in a way that a breakdown face thereof is put away from a protecting film on a surface of a substrate.
CONSTITUTION: When an applied voltage becomes larger, a breakdown is caused at a second junction 14. On the other hand, when a current starts to flow, the voltage is decreased through an inside resistance factor between a first conductive diffusion region 3 and a second conductive region 5. As a result, a voltage applied to the second junctional face 14 and a first junctional face 13 spreads out in the diffusion regions 3 and 5. Consequently, a high voltage that causes a breakdown can not be applied to the first junctional face 13. Moreover, when a reverse-directional breakdown face is put away from a surface protective film 9, a deterioration with age in diode characteristics can be prevented because the hot carrier is not trapped by the protective film 9.
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Inventors:
Yasuhiro Sakurai
Application Number:
JP18060592A
Publication Date:
June 04, 2002
Filing Date:
June 16, 1992
Export Citation:
Assignee:
Citizen Watch Co., Ltd.
International Classes:
H01L29/861; (IPC1-7): H01L29/861
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