To form a p-type semiconductor with a high carrier concentration with a compound semiconductor.
Doping p-type and n-type impurities in a compound semiconductor, a p-type semiconductor is obtained. That is, doping Sb and 1 in CuInSe2, a p-type semiconductor is formed. The concentration of the p-type carrier of this p-type semiconductor is 5×1017 (cm-3), and it is larger than the concentration (8×1016 (cm-3)) obtained when only Sb is doped in CuInSe2. Using as a p-type semiconductor layer 3 the CuInSe2 layer including Sb and I, there is created a thin film solar battery of the layer structure comprising a glass substrate 2, an Mo electrode 1, the CuInSe2 layer (p-type semiconductor layer) 3, a CdS layer (n-type semiconductor layer) 4, and an ITO electrode 5. The conversion efficiency of this thin film solar battery is 13%, and it is larger than the conversion efficiency (11%) obtained when using as the p-type semiconductor layer 3 a CuInSe2 layer including only Sb.
YAMAMOTO TETSUYA
YOSHIDA HIROSHI
