To provide a Mg2Si system p-type thermoelectric material having a thermoelectric performance higher than that of the conventional Mg2Si system p-type thermoelectric material.
The p-type thermoelectric material includes the Mg2Si to which Na and Ag are added, and the substitution of Na atom is conducted at Mg site of the Mg2Si and the substitution of Ag atom is conducted at Si site of Mg2Si. A part of the Na and the Ag is precipitated in a grain boundary to form a network. The p-type thermoelectric material is manufactured by holding a mixture in which Mg powder, Si powder, Ag powder, and grain aggregate Na are mixed by the respective predetermined proportion in an atmosphere whose temperature is adjusted to not lower than the melting point of Ag and lower than the melting point of Mg2Si with the use of solid-phase/liquid-phase reaction method where liquid-phase of Mg, Ag, and Na, and solid-phase Mg2Si exist together.
YAMANA KEITA
TANIZAWA MOTOHARU
UMEMOTO MINORU
TODAKA GIICHI
KAWAI TAKAHIRO
SUZUKI TAKAYUKI
UNIV TOYOHASHI TECHNOLOGY
Makoto Onda