Title:
ルテニウム前駆体を使用したＰＥＡＬＤプロセス
Document Type and Number:
Japanese Patent JP7345546
Kind Code:
B2
Abstract:
Plasma enhanced atomic layer deposition (PEALD) processes which use a ruthenium precursor of formula RARBRu(0), wherein RA is an aryl group-containing ligand, and RB is a diene group-containing ligand, along with a reducing plasma applied at greater than 200 W are described. Use of the RARBRu(0) ruthenium precursors in PEALD with +200 W reducing plasma such as ammonia plasma, can provide very good rates of deposition of Ru, have lower carbon and less resistivity, and provide very dense Ru films. The method can be used to form well-formed Ru film with high conformality on integrated circuits and other microelectronic devices.
Inventors:
Chen, Philip S. H.
Hendrix, Brian Sea.
Baum, Thomas H.
Condo, Eric
Hendrix, Brian Sea.
Baum, Thomas H.
Condo, Eric
Application Number:
JP2021525796A
Publication Date:
September 15, 2023
Filing Date:
November 06, 2019
Export Citation:
Assignee:
Entegris Incorporated
International Classes:
C23C16/18; C23C16/455; C23C16/50; H01L21/285
Domestic Patent References:
| JP2020522618A | ||||
| JP2009046440A | ||||
| JP2008124464A |
Foreign References:
| KR1020090082543A |
Attorney, Agent or Firm:
Sonoda & Kobayashi Patent Attorneys Corporation
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