Title:
【発明の名称】半導体構造体の製造方法
Document Type and Number:
Japanese Patent JP2003523081
Kind Code:
A
Abstract:
High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.
Inventors:
Lambdani, Jamal
Drupad, Ravindranas
Hilt, Lindiel.
Eisen visor, Kurt William
Drupad, Ravindranas
Hilt, Lindiel.
Eisen visor, Kurt William
Application Number:
JP2001559048A
Publication Date:
July 29, 2003
Filing Date:
February 08, 2001
Export Citation:
Assignee:
MOTOROLA INCORPORATED
International Classes:
C30B25/18; H01L21/20; H01L21/205; H01L21/316; H01L21/318; H01L21/822; H01L21/8222; H01L21/8232; H01L21/8234; H01L21/8238; H01L21/8248; H01L21/8249; H01L21/8252; H01L21/331; H01L21/8258; H01L27/04; H01L27/06; H01L27/092; H01L27/095; H01L27/14; H01L27/15; H01L29/26; H01L29/267; H01L29/732; H01S5/02; H01S5/026; H01L33/16; H01L33/30; (IPC1-7): H01L21/20; H01L21/06; H01L21/205; H01L21/8222; H01L21/8232; H01L21/8234; H01L21/8249; H01L27/06; H01L27/095; H01L27/14; H01L27/15; H01L29/26; H01S5/026
Attorney, Agent or Firm:
Hironobu Onda (1 person outside)