Title:
【発明の名称】固体撮像装置の製造方法
Document Type and Number:
Japanese Patent JP2656918
Kind Code:
B2
Abstract:
PURPOSE:To avoid uneveness of impurity concentration and prevent a fixed pattern noise by employing a high resistance N-type Si substrate which is made by the application of a neutron beam as a semiconductor substrate for forming a solid-state image pickup device. CONSTITUTION:A neutron beam is applied to an Si wafer by a light water unclear reactor and a heavy water nuclear reactor to convert a part of Si, which is a composing element of the wafer, into P, which is an N-type impurity, by nucleus conversion and an Si substrate with a specific resistivity of 10-100OMEGA.cm is obtained. On the Si substrate obtained as described above, photodetecting parts 1, vertical shift registors 2, a horizontal shift registor 3 and so forth are formed to constitute a vertical overflow drain type solid-state image pickup device. By employing the Si substrate described above, uneveness of N-type impurity concentration can be avoided and a required high resistance N-type Si substrate can be obtained so that a fixed pattern noise can be prevented.
Inventors:
KATO YASABURO
SUZUKI TOSHIHIKO
IZAWA NOBUYUKI
KANBE HIDEO
HAMAZAKI MASAHARU
SUZUKI TOSHIHIKO
IZAWA NOBUYUKI
KANBE HIDEO
HAMAZAKI MASAHARU
Application Number:
JP25326985A
Publication Date:
September 24, 1997
Filing Date:
November 12, 1985
Export Citation:
Assignee:
SONII KK
International Classes:
C30B31/20; H01L27/14; H01L27/148; H04N5/335; H04N5/359; H04N5/365; H04N5/367; H04N5/369; H04N5/372; (IPC1-7): H01L27/148; H04N5/335
Domestic Patent References:
| JP5723282A | ||||
| JP53109474A | ||||
| JP59167055A | ||||
| JP5814066B2 |
Other References:
馬場玄武「最新電子デバイス事典」（昭５１−３−２０）ラジオ技術社 Ｐ．３５８
Attorney, Agent or Firm:
Hidekuma Matsukuma