Title:
【発明の名称】半導体記憶装置の製造方法
Document Type and Number:
Japanese Patent JP2792089
Kind Code:
B2
Abstract:
PURPOSE:To prevent an active region from being contaminated by an impurity, such as phosphorus and the like, by a method wherein after a gate oxide film and a gate polycrystalline silicon layer are formed, element isolation grooves are formed, these grooves are filled and thereafter, a conductor layer is formed on the gate polycrystalline silicon layer. CONSTITUTION:A pad layer, which consists of a field oxide film 2, a gate oxide film 4, a gate polycrystalline silicon layer 5, a pad oxide film 6, a pad polycrystalline silicon layer 7 and the like, is formed on a semiconductor substrate 1. After this, element isolation grooves 9 which reach from the surface of the pad layer to the interior of the substrate 1 are formed and a buried material layer 11 is formed in the whole surface using a BPSG film and the like. Then, after the layer 7 and the film 6 are removed, a conductor layer 12 consisting of WSi and the like is formed on the layer 5. Thereby, an active region 3 is never contaminated by an impurity such as phosphorus and the like.
More Like This:
| JP2014165372 | NONVOLATILE SEMICONDUCTOR STORAGE DEVICE |
| JP6076584 | Semiconductor device and its producing method |
| JPS5994844 | MANUFACTURE OF SEMICONDUCTOR DEVICE |
Inventors:
NISHISAKA SADAICHIRO
Application Number:
JP8839989A
Publication Date:
August 27, 1998
Filing Date:
April 08, 1989
Export Citation:
Assignee:
NIPPON DENKI KK
International Classes:
H01L21/76; H01L21/8246; H01L27/112; (IPC1-7): H01L21/8246; H01L21/76; H01L27/112
Domestic Patent References:
| JP6231177A | ||||
| JP2143461A | ||||
| JP58165341A | ||||
| JP736424B2 |
Attorney, Agent or Firm:
Yusuke Omi