Title:
【発明の名称】半導体装置の絶縁層の形成方法
Document Type and Number:
Japanese Patent JP3061558
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To harden an SOG film so that any residual substance can not be generated by forming a second insulating film by SOG on a first insulating film on a substrate, operating a low temperature processing and a plasma processing for hardening the second insulating film, and forming a third insulating film. SOLUTION: A first insulating film 5 is formed by forming an oxide film by a PECVD method. The spin coating of SOG substances is operated for flattening the surface so that a second insulating film 7 can be formed. A low temperature thermal processing is executed several times while a temperature is successively increased, and solvent components, volatile organic components, and moisture excluding organic substances used as coupling agent included in the second insulating film 7 are removed. A plasma processing is executed to the second insulating film 7, and residual substances such as Si-OH, H2 O, solvent, and volatile organic substances are removed so that a membranous quality with high elasticity can be formed. A third insulating film 9 is formed so that an insulating layer 11 can be completed. Thus, it is possible to prevent the current/voltage characteristics of the SOG film from being deteriorated.
Inventors:
Min Park
Grated root
Grated root
Application Number:
JP28700995A
Publication Date:
July 10, 2000
Filing Date:
November 06, 1995
Export Citation:
Assignee:
Electronics and Telecommunications Research Institute
International Classes:
H01L21/768; H01L21/265; H01L21/31; H01L21/316; (IPC1-7): H01L21/316; H01L21/768
Domestic Patent References:
| JP2237030A | ||||
| JP4116825A | ||||
| JP4174520A | ||||
| JP4196537A | ||||
| JP778816A |
Attorney, Agent or Firm:
Kazuko Tomita (1 outside)