Title:
【発明の名称】複合形単一ウエーハ用の高生産性形マルチステーシヨン方式処理装置
Document Type and Number:
Japanese Patent JP3178824
Kind Code:
B2
Abstract:
Each of a plurality of individually heated circularly located susceptors supports and heats one of a plurality of wafers within a processing chamber. An overhead gas dispersion head, vertically aligned with each susceptor, directs, in combination with downstream flow control structure, flow of a reactant gas radially uniformly across the supported wafer. A spider sequentially relocates each of the wafers, as a group, to an adjacent susceptor. Wafer handling apparatus replaces each processed wafer to provide a high production rate throughput. A source of RF energy radiating essentially primarily between each gas dispersion head and its associated susceptor provides a plasma enhanced environment and the low level intensity elsewhere within the reactor reduces residual deposits.
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Inventors:
H. Peter Dobriyou Hay
William A Mazak
Rabindel Kay Agarwal
Jiyoung H. Curtain
Paul B Brown
Gyor are smith
William A Mazak
Rabindel Kay Agarwal
Jiyoung H. Curtain
Paul B Brown
Gyor are smith
Application Number:
JP12933590A
Publication Date:
June 25, 2001
Filing Date:
May 21, 1990
Export Citation:
Assignee:
IS M International NV
International Classes:
C23C16/455; C23C16/54; H01L21/205; H01L21/00; H01L21/31; C23C16/44; (IPC1-7): H01L21/205; C23C16/455
Domestic Patent References:
| JP60233827A | ||||
| JP1318235A | ||||
| JP3173419A | ||||
| JP61158946U | ||||
| JP61192443U | ||||
| JP596837U |
Attorney, Agent or Firm:
Heikichi Odashima