PURPOSE: To produce ultrahigh-grade zinc selenide by reacting zinc vapor obtained from metallic zinc of ≥a prescribed purity with selenium vapor obtained from metallic selenium of ≥a prescribed purity.
CONSTITUTION: High purity zinc and high purity selenium each exhibiting ≥99.9999wt.% purity are separately put each in an equal amount in a crucible 7 or 11 and the crucibles are each placed at a prescribed heating part in a reaction cylinder 6. The inside is then sufficiently evacuated and Ar gas as a carrier gas is allowed to flow while keeping the degree of vacuum to 0.1Torr. Selenium 5 and Zinc 4 are heated by a heater 1 respectively to ≥600°C and ≥400°C to generate their metallic vapors. Both the generated vapors are introduced into a reaction zone existing at the upper part in the reaction cylinder and heated up to 800°C so as to be reacted and the generated zinc selenide 3 is allowed to deposit in holes in a punching board of a reaction base plate 2 made of a glassy carbon and formed into a punching board shape. After the reaction cylinder is then internally cooled and returned to ordinary pressure, the objective zinc selenide 3 of ≥99.9999wt.% purity is recovered.
NISHINO ISAMU
TAYAMA KISHIO
NAGATA CHOJU
