PLASMA ETCHING METHOD AND PLASMA TREATMENT APPARATUS

Title:

PLASMA ETCHING METHOD AND PLASMA TREATMENT APPARATUS

Document Type and Number:

Japanese Patent JPH0684851

Kind Code:

A

Abstract:

PURPOSE: To provide a plasma etching method which has been improved so as to perform a plasma etching operation while an etching characteristic has been kept in a best state.

CONSTITUTION: The inside of a plasma treatment chamber 3 which houses a semiconductor wafer is cleaned. Immediately after its cleaning, a dummy wafer whose characteristic is the same as that of an object to be etched is plasma-etched inside the plasma treatment chamber 3. Thereby, the stable state of an etching characteristic is achieved. The object to be etched on the semiconductor wafer is plasma-etched inside the plasma treatment chamber in which the stable state of the etching characteristic has been achieved.

Inventors:

KATSUTA HIROMOTO
TOYODA MASATO
EJIMA TAIZO

Application Number:

JP23335792A

Publication Date:

March 25, 1994

Filing Date:

September 01, 1992

Export Citation:

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Assignee:

MITSUBISHI ELECTRIC CORP

International Classes:

H01L21/302; H01L21/304; H01L21/3065; (IPC1-7): H01L21/302; H01L21/304

Attorney, Agent or Firm:

Fukami Hisaro (3 outside)

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