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Title:
【発明の名称】半導体放射線検出素子の製造方法
Document Type and Number:
Japanese Patent JPH0716024
Kind Code:
B2
Abstract:
PURPOSE:To form layers in high concentration of hydrogen atoms on an element for manufacturing a radiation detector detecting fast neutrons on high sensitivity by a method wherein crystalline semiconductor element provided with a junction is coated with amorphous semiconductor layer to make hydrogen infiltrate into the layers. CONSTITUTION:Electrons 2 and 3 are mounted on both surfaces of a silicon substrate 1 internally provided with pn junction to be connected respectively to lead wires 21 and 31. Amorphous silicon layers 41, 42, 43 covering the electrode 2 are laminated on one surface of the substrate 1. Respective amorphous silicon layers 41-43 have hydrogen atom infiltrated layers on the side distant from the substrate 1. Besides, the lead wire 21 is led out of a window made in the amorphous silicon layers 41-43. In such a constitution, the concentration of hydrogen atoms contained in the amorphous semiconductor layers 5 coated on the surface is higher so that fast neutrons and hydrogen atoms may cause reaction in high probability as well as the amorphous semiconductor layers 5 may have higher sensitivity to the fast neutrons.

Inventors:
Norichu Sato
Yasukazu Seki
Application Number:
JP19691387A
Publication Date:
February 22, 1995
Filing Date:
August 06, 1987
Export Citation:
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Assignee:
Fuji Electric Co., Ltd.
International Classes:
G01T3/08; H01L31/00; H01L31/09; (IPC1-7): H01L31/09
Domestic Patent References:
JP61174778A
JP61156774A
Attorney, Agent or Firm:
Iwao Yamaguchi