PURPOSE: To eliminate generation of defective wafer by preventing generation of particles and charging by forming the title device of liquid phase sintered TiB2.
CONSTITUTION: The title fork is formed of liquid phase sintered TiB2. For example, a recessed part 1b which can be fit to a semiconductor wafer W is provided on one end part of a band plate-like fork main body 1a formed of liquid phase sintered TiB2, and an attaching step part 1b for attaching to a shaft 2 of a transfer robot is provided on the other end part. An entire of a surface is covered with a 10μm-thick CVD-TiB2 film of surface roughness Ra of 0.8μm to constitute a fork 1, and grounded through the shaft 2. After such a fork 1 is formed to a specified shape by adding Cr3C2 powder of 5wt.% to TiB2 powder of 95wt.% and mixing it by adding a small amount of binder, the binder is heated and removed, and sintered without applying a pressure for 1 to 5 hours at a temperature of 1900°C in a non-oxidizing atmosphere. Thereafter, an entire of the surface is covered with a CVD-TiB2 film for manufacture.
SUZUKI TOSHIYUKI
SANO SHO
