Title:
HIGH TEMPERATURE MELTING METAL COMPOUND THIN FILM AND FORMING METHOD AND DEVICE THEREOF
Document Type and Number:
Japanese Patent JPH076980
Kind Code:
A
Abstract:
PURPOSE: To provide a high-melting point metal compound thin film low in resistivity and small in compressive internal stress.
CONSTITUTION: A high-melting point metal compound thin film 62μΩcm or below in volume resistivity and 4.5GPa or below in compressive internal stress can be obtained through such a manner that a high-melting point metal compound thin film 210 deposited on a substrate 204 is irradiated with inert gas particles 207 of positive ions accelerated by an ion gun 206 to selectively eliminate oxygen attached to the thin film 210 from it.
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Inventors:
HANAOKA KATSUNARI
KAWASHIMA IKUE
KAWASHIMA IKUE
Application Number:
JP14854092A
Publication Date:
January 10, 1995
Filing Date:
May 15, 1992
Export Citation:
Assignee:
RICOH KK
RICOH GEN ELECTRON RES INST
RICOH GEN ELECTRON RES INST
International Classes:
H01L21/285; H01L21/28; H01L21/318; H01L21/3205; H01L23/52; (IPC1-7): H01L21/285; H01L21/318; H01L21/3205
Attorney, Agent or Firm:
Uemoto Masaharu
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