Title:
PAD CONDITIONER AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JP3261687
Kind Code:
B2
Abstract:
PURPOSE: To prevent the characteristics deterioration of a semiconductor device and improve the yield of products by forming a substrate with a sintered body made of silicon carbide or graphite, coating the surface with a polycrystalline silicon carbide film or a diamond film, and preventing the mingling of metal impurities from the sintered body.
CONSTITUTION: A substrate 1 is formed with a silicon carbide sintered body or a graphite sintered body. Multiple grooves or holes 2 are formed on the substrate 1, and the whole surface is coated with a polycrystalline silicon carbide film or a diamond film 3 by the chemical vapor phase epitaxy (CVD) method. The thickness T of the film 3 is set to 20μm or above. The depth D and width W of the grooves or holes 2 are set to about 1-5mm respectively. The polycrystalline silicon carbide film or the diamond film 3 has high purity, and the metal impurity content is specified to 0.1ppm or below.
Inventors:
Hiroshi Inokawa
Application Number:
JP12733094A
Publication Date:
March 04, 2002
Filing Date:
June 09, 1994
Export Citation:
Assignee:
Nippon Telegraph and Telephone Corporation
International Classes:
B24D3/00; B24B53/12; B24D18/00; H01L21/304; (IPC1-7): H01L21/304; B24B53/12; B24D3/00
Domestic Patent References:
| JP7297195A | ||||
| JP7254578A | ||||
| JP6179166A | ||||
| JP6471661A | ||||
| JP1177973A | ||||
| JP57149158A | ||||
| JP393069U |
Attorney, Agent or Firm:
Hisao Fukumori