PURPOSE: To make it possible to reproduce accurately measured data even at a high-current region by a method wherein a normalized emitter effective area (γ) and a base extrusion coefficient B are introduced in a formula to represent a collector current IC and a base current IB, the currents IC and IB are respectively represented by specified formulas and the value of a parameter is sampled from those formulas by a specified method.
CONSTITUTION: In the DC voltage-current characteristics of a bipolar transistor, a normalized emitter effective area (γ) and a base extrusion coefficient B are introduced in a formula to represent a collector current IC and a base current IB and the currents IC and IB are represented like formulas (a) to (h). The relation between the (γ) and VBE, HFE-1 or the IC is found from the formulas (a), (b) and (g) and the above (γ) is corrected so that it qualitatively becomes actual physical characteristics. Thereby, the corrected normalized emitter effective area (γ) is sampled and when an Early effect can be ignored, the coefficient B is sampled from the formulas (c) and (a) independently of the area (γ) and when the Early effect can not be ignored, the coefficient B is sampled using the above corrected area (γ) and the formulas (c) and (a).
| WO/2017/212814 | INSPECTION JIG AND INSPECTION DEVICE |
| JPH11160387 | IC TESTER, IC TESTING METHOD AND STORAGE MEDIUM |
HASEGAWA TAKEHIRO
SAKUI YASUSHI
