Title:
粒子ビーム電流モニタリング技術
Document Type and Number:
Japanese Patent JP4416949
Kind Code:
B2
Abstract:
A method of monitoring particle beam current in an ion implanter in which the ion beam is analyzed to separate it into a separate sub-beam for each ion charge state. At least one sub-beam, having a charge state different from the desired charge state, is intercepted, and the current of the intercepted sub-beam is measured. This current is useful as an estimate of the current of the desired sub-beam which is used for the implantation.
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Inventors:
Richards, Stephen, Elle, F
Tokoro, Nobuhiro
Tokoro, Nobuhiro
Application Number:
JP2000562766A
Publication Date:
February 17, 2010
Filing Date:
July 13, 1999
Export Citation:
Assignee:
Varian Semiconductor Equipment Associates, Inc.
International Classes:
G21K5/04; H01J37/317; B01J19/08; G01R19/00; G01T1/29; H01L21/265
Domestic Patent References:
| JP10083785A | ||||
| JP6168697A | ||||
| JP62040369A | ||||
| JP5017910U | ||||
| JP8329880A |
Attorney, Agent or Firm:
Akira Hori