Title:
PATTERN DEFECT ANALYSING APPARATUS
Document Type and Number:
Japanese Patent JPS5910231
Kind Code:
A
Abstract:
PURPOSE:To accurately inspect major pattern defect not only by inspecting a micro-miniature pattern with a high magnification factor but also sequentially inspecting the position where abnormality of detail areas is stored through magnified observation after the visual inspection or the inspection by a microscope with a low magnification factor and then storing defective pattern position to a control unit. CONSTITUTION:A pattern defect D can be visually detected as a defective point of several mum or larger from the diffraction, scattering and reflection phenomenon by the beam B1 which irradiates a wafer 4 at a low angle or the beam B2 which is wide and high in the parallelism. After confirming a defect found by the macro inspection by the pointer beam PB sent from an optical beam radiator 13, a wafer is sent to the micro-inspection. The position data of defects a-g found in the macro-inspection are stored in the memory. Thereafter, the wafer 4 is shifted to the micro-inspection part of position 5A by shifting the chuck and stage 5. Thereby, defects a-g are rad in the sequence indicated by the arrow mark and finally micro-miniature pattern can be inspected and judged through the movement of chuck and stage 5.
Inventors:
ORISAKA SHINJI
SUEHIRO KAZUTO
SUEHIRO KAZUTO
Application Number:
JP12021182A
Publication Date:
January 19, 1984
Filing Date:
July 09, 1982
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
G01N21/88; G01N21/956; H01L21/66; (IPC1-7): G01N21/88
Domestic Patent References:
| JPS5792844A | 1982-06-09 |
Attorney, Agent or Firm:
Masuo Oiwa
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