Title:
パターン形成方法及びレジスト組成物
Document Type and Number:
Japanese Patent JP5842741
Kind Code:
B2
Abstract:
A negative pattern is formed by applying a resist composition onto a substrate, prebaking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to dissolve the unexposed region of resist film. The resist composition comprising a polymer comprising recurring units of cycloolefin having a hydroxyl group substituted with an acid labile group, an acid generator, and an organic solvent displays a high dissolution contrast and high etch resistance.
Inventors:
Jun Hatakeyama
Tomohiro Kobayashi
Koji Hasegawa
Tomohiro Kobayashi
Koji Hasegawa
Application Number:
JP2012134378A
Publication Date:
January 13, 2016
Filing Date:
June 14, 2012
Export Citation:
Assignee:
Shin-Etsu Chemical Co., Ltd.
International Classes:
G03F7/038; C08F32/04; C08F32/08; G03F7/004; G03F7/039; G03F7/11; G03F7/32
Domestic Patent References:
| JP2012137698A | ||||
| JP2008241869A | ||||
| JP2007511785A | ||||
| JP2012128383A | ||||
| JP2012027438A | ||||
| JP2009258586A |
Attorney, Agent or Firm:
Takashi Kojima
Saori Shigematsu
Katsunari Kobayashi
Takeshi Ishikawa
Saori Shigematsu
Katsunari Kobayashi
Takeshi Ishikawa