To provide a pattern formation method enabling a double patterning process to process a substrate by one time dry etching, and a resist material used therefor.
This pattern formation method includes a step of coating a first positive resist material containing a polymer compound obtained by copolymerizing recurring units having lactone as an adhesion group, acid labile group-containing recurring units, and carbamate structure-containing recurring units, and a photoacid generator onto a substrate 10 to form a first resist film; a step of forming a first resist pattern by heating and developing the first resist film after exposing; a step of heating the first resist pattern to inactivate it to acid, and forming a second resist film by coating a second positive resist material using C3-8 alcohol or C3-8 alcohol and C6-12 ether as solvent on the first resist pattern formed on the substrate, and a step of forming a second resist pattern 50 by exposing and developing the second resist film after applying PEB. Thus, the substrate can be processed by forming a second pattern in an area where the first resist pattern is not formed, performing double patterning to halve the pitch between the patterns, and one dry etching.
KATAYAMA KAZUHIRO
OSAWA YOICHI
OHASHI MASAKI
| JP2009288343A | 2009-12-10 |
| WO2008117693A1 | 2008-10-02 |
Saori Shigematsu
Katsunari Kobayashi
Takeshi Ishikawa