To provide a pattern formation method capable of plotting a photosensitive material for an ultraviolet ray in a pattern with high throughput by a mask-less direct plotting exposure device having an irradiating light source being an h-line in a main wavelength.
The pattern formation method comprises: a step of forming, on a substrate, a first photosensitive material of low sensitivity to the h-line of the main wavelength irradiated from the mask-less direct plotting exposure device but of high sensitivity to energy line including the ultraviolet light ; a step of forming a second photosensitive material of high sensitivity on the first photosensitive material to the h-line of the main wavelength; a step of plotting a second pattern by using the mask-less direct plotting exposure device to the second photosensitive material; a step of developing the second photosensitive material; a step of collectively exposing the second photosensitive material and the first photosensitive material formed with the second pattern; a step of separating the second photosensitive material; and a step of forming an objective first pattern by developing the first photosensitive material.
YAMAGUCHI YOSHIHIDE
HASEBE TAKEHIKO
KISHI MASAKAZU
YAMAGUCHI TAKESHI
| JPH0254270A | 1990-02-23 | |||
| JPS6061752A | 1985-04-09 | |||
| JP2002229212A | 2002-08-14 | |||
| JP2001242618A | 2001-09-07 | |||
| JPH0498260A | 1992-03-30 | |||
| JPH11338158A | 1999-12-10 | |||
| JPH0254270A | 1990-02-23 | |||
| JPS6061752A | 1985-04-09 | |||
| JP2002229212A | 2002-08-14 | |||
| JP2001242618A | 2001-09-07 |
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