Title:
PATTERN FORMATION METHOD
Document Type and Number:
Japanese Patent JP2013201173
Kind Code:
A
Abstract:
To enable independent measurement of two kinds of pattern sizes of different manufacturing conditions after pattern formation.
The pattern formation method for forming a pattern on a substrate forms a pattern on a substrate by a sidewall type double patterning method by using a mask pattern with a mark composed of a portion cut by a width of a pattern that configures a mask pattern or more.
Inventors:
YANAGI MASAMICHI
Application Number:
JP2012067100A
Publication Date:
October 03, 2013
Filing Date:
March 23, 2012
Export Citation:
Assignee:
ELPIDA MEMORY INC
International Classes:
H01L21/027; G03F1/38; G03F7/40
Attorney, Agent or Firm:
Kenho Ikeda
Shuichi Fukuda
Takashi Sasaki
Shuichi Fukuda
Takashi Sasaki
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