Title:
パターン形成方法
Document Type and Number:
Japanese Patent JP4029064
Kind Code:
B2
Abstract:
After forming a resist film of a chemically amplified resist material, pattern exposure is carried out by selectively irradiating the resist film with exposing light while supplying, onto the resist film, a solution including a basic compound. After the pattern exposure, the resist film is subjected to post-exposure bake and is then developed with an alkaline developer. Thus, a resist pattern made of an unexposed portion of the resist film can be formed in a good shape.
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Inventors:
Masataka Endo
Masako Sasako
Masako Sasako
Application Number:
JP2003177889A
Publication Date:
January 09, 2008
Filing Date:
June 23, 2003
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
G03F7/38; H01L21/027; G03F7/00; G03F7/004; G03F7/038; G03F7/039; G03F7/20
Domestic Patent References:
| JP7220990A | ||||
| JP6266100A | ||||
| JP3171140A | ||||
| JP6275513A | ||||
| JP2002348332A | ||||
| JP2001133980A |
Attorney, Agent or Firm:
Hiroshi Maeda
Hiroshi Koyama
Hiroshi Takeuchi
Yuji Takeuchi
Katsumi Imae
Tomoo Harada
Hiroshi Koyama
Hiroshi Takeuchi
Yuji Takeuchi
Katsumi Imae
Tomoo Harada