PURPOSE: To improve a drawing position accuracy of an X-ray mask pattern by allowing a fine pattern part to be exposed to X rays, allowing a pattern part which is coarser than the fine pattern part to be exposed to light, and achieving partial sensitization by these two exposure processes.
CONSTITUTION: A fine pattern to be formed is divided into an extremely fine pattern element group 5 which is formed by exposure to X ray and a pattern element group 6 which is no extremely fine and is formed by exposure to light. Then, an X-rays mask and a reticle for exposure to light with each pattern element group only are produced and a resist which is applied to a substrate which is subjected to exposure to light is subjected to X-rays exposure and light exposure using each before passing through development process. Namely, an area ratio of the extremely fine pattern element group 5 is extremely small so that extremely pattern element group 5 which is formed by exposure to X rays corresponds to an extremely small amount of the entire fine pattern. Thus, the number of picture elements of the X-ray mask is reduced and positional error mainly due to drift over time of an electron beam is also reduced, thus enabling X-ray exposure to be made with an improved pattern position accuracy.
TANAKA HARUYORI
KAWAI YOSHIO
DEGUCHI KIMIKICHI
BAN KOJI
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