Title:
PATTERN FORMATION
Document Type and Number:
Japanese Patent JPS5961928
Kind Code:
A
Abstract:
PURPOSE:To form a resist pattern with little reduction of film with a dry method by placing a monomer including Si incontact with an organic thin film which is irradiated with a radioactive ray, forming thereby a polymer including Si to the irradiated area and thereafter processing it with the O2 plasma. CONSTITUTION:An organic thin film 2 is formed in the thickness of 0.3mum-5mum on a silicon wafer or a substrate 1 such as chromium vacuum-deposited glass and such film is then irradiated with a radioactive ray 3 such as electron beam, X-ray or ion beam in the vacuum chamber. Thereafter, the substrate is disposed in the same or other vacuum-chamber, an organic compound steam including Si is introduced into the vacuum chamber and the inside thereof is kept at the prescribed pressure. After a constant period, a polymer film 4 including Si is selectively formed at the radioactive ray 3 irradiating area on the organic thin film 2. Finally, this substrate is subjected to the O2 plasma. Thereby, the organic thin film is removed only from the area where there is no pattern of polymer film 4 and a resist pattern is formed.
Inventors:
KOKADO YUUICHI
KITOU MAKOTO
HONDA YOSHINORI
KITOU MAKOTO
HONDA YOSHINORI
Application Number:
JP17105482A
Publication Date:
April 09, 1984
Filing Date:
October 01, 1982
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L21/302; G03F7/26; H01L21/027; H01L21/3065; (IPC1-7): H01L21/302
Attorney, Agent or Firm:
Junnosuke Nakamura