Title:
PATTERN FORMING MATERIAL AND PATTERN FORMING METHOD
Document Type and Number:
Japanese Patent JP3779122
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain a good pattern shape when a resist pattern is formed by using light for exposure having a wavelength of 1 nm band to 30 nm band or 110 nm band to 180 nm band.
SOLUTION: A pattern forming material with a polymer containing a 1st unit of formula (1) and a 2nd unit of formula (2) and an aci9d generating agent is applied on a substrate to form a resist film. In the formulae, R1 and R2 are the same or different and are each alkyl, Cl or Cl-containing alkyl and R3 is a protective group which is released by an acid. The resist film is patternwise exposed by irradiation with light for exposure having a wavelength of 1 nm band to 30 nm band or 110 nm band to 180 nm band and the patternwise exposed resist film is developed to form the objective resist pattern.
Inventors:
Kishimura Shinji
Masako Sasako
Masamitsu Shirai
Masahiro Kadooka
Masako Sasako
Masamitsu Shirai
Masahiro Kadooka
Application Number:
JP2000070931A
Publication Date:
May 24, 2006
Filing Date:
March 14, 2000
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
G03F7/039; G03F7/20; G03F7/30; H01L21/027; (IPC1-7): G03F7/039; G03F7/30; H01L21/027
Domestic Patent References:
| JP9292709A | ||||
| JP11258809A | ||||
| JP11352693A |
Attorney, Agent or Firm:
Hiroshi Maeda
Hiroshi Koyama
Hiroshi Koyama