To provide a pattern forming method capable of simultaneously satisfying high sensitivity, high resolution (such as high resolution power), and high line width roughness (LWR) performance at an extremely high level, an electron beam sensitive or extreme ultraviolet ray sensitive resin composition and a resist film, and to provide a method for manufacturing an electronic device and an electronic device using the same.
A pattern forming method includes; (1) forming a film using an electron beam sensitive or extreme ultraviolet ray sensitive resin composition; (2) exposing the film with an electron beam or an extreme ultraviolet ray; and (3) developing the exposed film using a developer including an organic solvent. The electron beam sensitive or extreme ultraviolet ray sensitive resin composition includes: (A) a resin having a repeating unit (R) having a structural moiety decomposed by irradiation with an electron beam or an extreme ultraviolet ray to generate an acid; and (B) a solvent.
IWATO KAORU
TSUBAKI HIDEAKI
| JP2011170316A | 2011-09-01 | |||
| JP2010085499A | 2010-04-15 | |||
| JP2011221513A | 2011-11-04 | |||
| JP2012032806A | 2012-02-16 | |||
| JP2012032807A | 2012-02-16 |
| WO2012121278A1 | 2012-09-13 | |||
| WO2012114963A1 | 2012-08-30 |
Toshiyuki Ozawa
Hasegawa Hiromichi