To provide a pattern forming method which improves performance in microfabrication of a semiconductor element using an electron beam or extreme ultraviolet ray (EUV ray) and is capable of simultaneously satisfying an excellent pattern shape, high resolution (such as high critical resolution), high line width roughness (LWR) performance at an extremely high level, an electron beam sensitive or extreme ultraviolet ray sensitive resin composition, and a resist film, and to provide a method for manufacturing an electronic device and an electronic device using the same.
There is provided a pattern forming method including the steps in the following order of: (1) forming a film using an electron beam sensitive or extreme ultraviolet ray sensitive resin composition including: (A) a resin including acid decomposable repeating units in which a solubility of the resin in a developer having an organic solvent is decreased by an action of an acid; (B) a compound that generates an acid by irradiation with an electron beam or extreme ultraviolet ray; (C) a resin having at least one group selected from the group consisting of a fluorine atom, a group having a fluorine atom, a group having a silicon atom, an alkyl group having 6 or more carbon atoms, a cycloalkyl group having 6 or more carbon atoms, an aryl group having 9 or more carbon atoms, an aralkyl group having 10 or more carbon atoms, an aromatic ring group substituted with at least one alkyl group having 3 or more carbon atoms, and an aromatic ring group substituted with at least one cycloalkyl group having 5 or more carbon atoms; and (D) a solvent; (2) exposing the film using the electron beam or extreme ultraviolet ray; and (4) developing the exposed film using a developer including an organic solvent after exposure to form a negative pattern. An electron beam sensitive or extreme ultraviolet ray sensitive resin composition used for the method, and a resist film formed by the method are provided. Further, a method for manufacturing an electronic device and an electronic device using the pattern forming method are also provided.
TAKIZAWA HIROO
HIRANO SHUJI
TSUBAKI HIDEAKI
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Toshiyuki Ozawa
Hasegawa Hiromichi