PURPOSE: To stably form a resist pattern with high resolution and excellent durability against dry etching even when a exposure light source of short wavelengths is used, by processing to produce bonds of a first compd. and a second compd. after the second step of the process.
CONSTITUTION: A photosensitive layer containing a photosensitive polymer compd. having high transmittance for light of about 180-220nm wavelength and having no aromatic ring and a low mol.wt. compd. hating aromatic rings is formed and exposed to light. Then the layer is processed to produce chemical bonds of the photosensitive polymer compd. and low mol.wt. compd. to introduce aromatic rings to the polymer compd. Thereby, the photosensitive layer has high transmittance for light of about 180-220nm wavelength during exposure so that enough photochemical reaction proceeds in the whole film. During etching, the photosensitive polymer compd. is bonded with aromatic rings to have high durability against dry etching.
GOKOCHI TORU
ASAKAWA KOUJI
NAKASE MAKOTO
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