Title:
PATTERN FORMING METHOD
Document Type and Number:
Japanese Patent JPH10186669
Kind Code:
A
Abstract:
To provide a means of efficiently forming a resist pattern almost free from unevenness in dimensions required to produce a fine element almost free form unevenness in characteristics, e.g. a quantum effect device.
A resist pattern almost free from unevenness in dimensions is formed under conditions which attains high sensitivity by using a cyclic or basket like polymer based on Si and O atoms, e.g. polyhydrogen silsesquioxane having a basic structure represented by the formula as a resist forming polymer and an aq. alkali soln. as a developer. A fine element almost free from unevenness in characteristics, e.g. a quantum effect device is produced using the resist pattern.
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Inventors:
IKUTSU HIDEO
Application Number:
JP34577396A
Publication Date:
July 14, 1998
Filing Date:
December 25, 1996
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE
International Classes:
G03F7/038; G03F7/075; G03F7/30; G03F7/40; H01L21/027; (IPC1-7): G03F7/075; G03F7/038; G03F7/30; G03F7/40; H01L21/027
Attorney, Agent or Firm:
Junnosuke Nakamura
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