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Patent Searching and Data


Title:
PEELING METHOD, PEELING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2009231533
Kind Code:
A
Abstract:

To provide a peeling method enabling easy peeling, and to improve a manufacturing yield of a device by improving peeling accuracy.

The method peels a multilayer substrate (S) having a first substrate (S1) with a peeling layer (3) and a semiconductor element (55) formed thereon and a second semiconductor substrate (S2) joined to the semiconductor element formation surface of the first substrate via a bonding layer (18). The method peels the first substrate and the second substrate from the inside or interface of the peeling layer (3) of the multilayer substrate under a negative pressure. According to this method, the first substrate and the second substrate are peeled under a negative pressure to enlarge the gap in the inside or interface of the peeling layer, so that peeling can be facilitated.


Inventors:
ONODERA KATSUMI
Application Number:
JP2008075131A
Publication Date:
October 08, 2009
Filing Date:
March 24, 2008
Export Citation:
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Assignee:
SEIKO EPSON CORP
International Classes:
H01L21/02; H01L21/336; H01L27/12; H01L29/786
Attorney, Agent or Firm:
Yoshiyuki Inaba
Katsuro Tanaka
Shinji Oga