PELLICLE AND METHOD (PELLICLE FILM OPTIMIZED FOR IMMERSION LITHOGRAPHY SYSTEM WITH NA1)

Title:

PELLICLE AND METHOD (PELLICLE FILM OPTIMIZED FOR IMMERSION LITHOGRAPHY SYSTEM WITH NA1)

Document Type and Number:

Japanese Patent JP2008191656

Kind Code:

A

Abstract:

To provide an optical pellicle to protect a photomask from particulate contamination during semiconductor lithography which has enhanced transparency and operational characteristics.

The pellicle utilizes alternating layers of a transparent polymer and a transparent inorganic layer to form pellicles which have high transmission properties and high strength. In a preferred pellicle, a three-layer pellicle is provided having a transparent inorganic layer 4 sandwiched between two polymer layers 12a and 12b. A five-layer pellicle is also provided with the outer layers and a middle layer being polymer layers and the inner layers an inorganic material. The preferred polymer layer is a perfluorinated polymer such as Teflon (R) and the preferred inorganic material is silicon dioxide. The pellicle of the invention provides light transmission of greater than 0.99% at incident light angles up to arcsine 0.45.

Inventors:

BRUNNER TIMOTHY A
HIBBS MICHAEL S

Application Number:

JP2008001453A

Publication Date:

August 21, 2008

Filing Date:

January 08, 2008

Export Citation:

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Assignee:

IBM

International Classes:

G03F1/14; H01L21/027

Domestic Patent References:

JPS61209449A	1986-09-17
JPS63284551A	1988-11-21
JPH06230560A	1994-08-19
JPH09161967A	1997-06-20
JP2001154340A	2001-06-08
JP2008040469A	2008-02-21
JPH02158735A	1990-06-19
JPH0543238A	1993-02-23

Attorney, Agent or Firm:

Takeshi Ueno
Tasaichi Tanae
Yoshihiro City
Hiroshi Sakaguchi

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