Title:
PEROVSKITE-TYPE OXIDE FILM, FERROELECTRIC FILM USING THE SAME, FERROELECTRIC DEVICE, AND METHOD FOR MANUFACTURING PEROVSKITE-TYPE OXIDE FILM
Document Type and Number:
Japanese Patent JP2012106902
Kind Code:
A
Abstract:
To provide a potassium niobate mix crystal-based perovskite-type oxide thick film exhibiting less compositional deviation and good crystallinity for a piezoelectric device.
The perovskite-type oxide film 1 is formed on a substrate 10, and has a thickness of ≥5 μm, and contains a perovskite-type oxide represented by formula (P): (K1-w-x, Aw, Bx)(Nb1-y-z, Cy, Dz)O3 (wherein 0<w<1.0, 0≤x≤0.2, 2.0≤y<1.0, 0≤z≤0.2, 0<w+x<1.0; A is an A site element being monovalent in ion valency except K; B is an A site element; C is a B site element of being pentavalent in ion valency; D is a B site element; and A to D are each one of or a plurality of metal elements).
Inventors:
SAKASHITA YUKIO
FUNAKUBO HIROSHI
KUROSAWA MINORU
ISHIKAWA MUTSUO
EINISHI HIROSHI
SHIRAISHI TAKAHISA
FUNAKUBO HIROSHI
KUROSAWA MINORU
ISHIKAWA MUTSUO
EINISHI HIROSHI
SHIRAISHI TAKAHISA
Application Number:
JP2011065517A
Publication Date:
June 07, 2012
Filing Date:
March 24, 2011
Export Citation:
Assignee:
FUJIFILM CORP
TOKYO INST TECH
TOKYO INST TECH
International Classes:
C01G33/00; B41J2/14; B41J2/16; H01L21/208; H01L21/8246; H01L27/105; H01L41/08; H01L41/09; H01L41/18; H01L41/22; H01L41/317; H01L41/39
Domestic Patent References:
| JP2004284889A | 2004-10-14 | |||
| JP2007042740A | 2007-02-15 | |||
| JP2006188046A | 2006-07-20 | |||
| JP2006291332A | 2006-10-26 | |||
| JP2007324538A | 2007-12-13 |
Attorney, Agent or Firm:
Yanagita Seiji
Go Sakuma
Go Sakuma